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 Freescale Semiconductor Technical Data
Document Number: MMG3010NT1 Rev. 5, 3/2008
Broadband High Linearity Amplifier
MMG3010NT1
The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small - signal RF. Features * Frequency: 0 to 6000 MHz * P1dB: 17 dBm @ 900 MHz * Small - Signal Gain: 15 dB @ 900 MHz * Third Order Output Intercept Point: 31 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
0 - 6000 MHz, 15 dB 17 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Symbol Gp IRL ORL P1db IP3 900 MHz 15 - 15 - 25 17 31 2140 MHz 14 - 17 - 25 16.5 30 3500 MHz 12 - 22 - 15 15.5 28 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 7 300 10 - 65 to +150 150 Unit V mA dBm C C
Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 54 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 83 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MMG3010NT1 1
RF Device Data Freescale Semiconductor
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Heterojunction Bipolar Transistor (InGaP HBT)
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Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 14 -- -- -- -- -- 46 -- Typ 15 - 15 - 25 17 31 4.5 54 5 Max -- -- -- -- -- -- 63 -- Unit dB dB dB dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3010NT1 2 RF Device Data Freescale Semiconductor
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Table 5. Functional Pin Description
1 2 3
RFin Ground RFout/DC Supply 1 2 3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Class 1A (Minimum) A (Minimum) IV (Minimum)
Charge Device Model (per JESD 22 - C101)
Table 7. Moisture Sensitivity Level
Test Methodology Rating 1 Package Peak Temperature 260 Unit C Per JESD 22 - A113, IPC/JEDEC J - STD - 020
MMG3010NT1 RF Device Data Freescale Semiconductor 3
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Pin Number
Pin Function
2
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50 OHM TYPICAL CHARACTERISTICS
20 Gp, SMALL-SIGNAL GAIN (dB) TC = 85C 15 - 40C 0
25C S11, S22 (dB)
-10 S11
-20 S22 -30 VCC = 5 Vdc ICC = 54 mA -40
10
VCC = 5 Vdc 5 0 1 2 f, FREQUENCY (GHz) 3 4 0 1 2 f, FREQUENCY (GHz) 3
4
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Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
17 P1dB, 1 dB COMPRESSION POINT (dBm) 16 900 MHz 15 14 13 12 11 10 8 9 10 11 12 13 1960 MHz 2600 MHz 2140 MHz
19 18 17 16 15 14 13 12 15 16 0.5 1 1.5 2 2.5 3 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 54 mA
3500 MHz VCC = 5 Vdc ICC = 54 mA 14
3.5
Pout, OUTPUT POWER (dBm)
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 100 90 36
Figure 5. P1dB versus Frequency
80 70 60 50 40 30 20 10 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V)
33
30
27 VCC = 5 Vdc ICC = 54 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
24
21
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
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ICC, COLLECTOR CURRENT (mA)
Gp, SMALL-SIGNAL GAIN (dB)
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 36 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 33 32 31 30 29 28 27 26 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100
33
30
27
24 f = 900 MHz 1 MHz Tone Spacing 21 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30
105
-40 MTTF (YEARS)
-50
104
-60 VCC = 5 Vdc ICC = 54 mA f = 900 MHz 1 MHz Tone Spacing
-70
-80 -3
103 0 3 6 9 12 15 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 54 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 11. MTTF versus Junction Temperature
8
-20 VCC = 5 Vdc, ICC = 54 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
NF, NOISE FIGURE (dB)
6
-30
-40
4
-50
2 VCC = 5 Vdc ICC = 54 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4
-60
-70 -3 0 3 6 9 12 15 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3010NT1
RF Device Data Freescale Semiconductor
5
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IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
50 OHM APPLICATION CIRCUIT: 40- 300 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
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Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20 10 0 -10 -20 -30 -40 0 100 200 300 400 500 f, FREQUENCY (MHz) VCC = 5 Vdc ICC = 54 mA S22 MMG30XX Rev 2 L1 S11 C1 C2 S21 R1 C4 C3
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2, C3 C4 L1 R1 Description 0.01 F Chip Capacitors 1000 pF Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number C0603C103J5RAC C0603C102J5RAC BK2125HM471 - T ERJ3GEY0R00V Manufacturer Kemet Kemet Taiyo Yuden Panasonic
MMG3010NT1 6 RF Device Data Freescale Semiconductor
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S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
LIFETIME BUY
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
20 10 0 -10 S11 -20 -30 S22 -40 300 800 1300 1800 2300 2800 VCC = 5 Vdc ICC = 54 mA 3300 3800 C1 L1 C2 S21
R1 C4 C3
MMG30XX Rev 2
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.01 F Chip Capacitor 1000 pF Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number C0603C151J5RAC C0603C103J5RAC C0603C102J5RAC HK160856NJ - T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic
MMG3010NT1 RF Device Data Freescale Semiconductor 7
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S21, S11, S22 (dB)
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25C, 50 Ohm System)
f MHz 100 150 200 250 300 350 400 450 500 550 600 |S11| 0.18961 0.18946 0.18931 0.18916 0.18900 0.18887 0.18873 0.18856 0.18844 0.18829 0.18813 0.18799 0.18783 0.18769 0.18753 0.18738 0.18723 0.18703 0.18689 0.18674 0.18657 0.18643 0.18629 0.18613 0.18599 0.18582 0.18568 0.18567 0.18569 0.18591 0.18645 0.18767 0.18855 0.19030 0.19186 0.19364 0.19581 0.19775 0.20022 0.20274 0.20483 0.20673 0.21006 0.21183 174.356 172.591 170.087 168.286 166.103 163.926 161.691 159.363 157.207 154.948 152.775 150.556 148.43 146.278 144.103 142.071 140.126 138.174 136.334 134.574 132.862 131.57 130.147 128.841 127.621 126.515 125.418 124.471 123.602 122.392 120.668 119.047 117.338 115.719 114.043 112.379 110.938 109.449 108.079 106.526 105.054 103.673 102.263 100.83 |S21| 6.08599 6.06991 6.05558 6.04027 6.03125 6.01832 6.00664 5.99750 5.98612 5.97231 5.95537 5.94078 5.92660 5.90891 5.88998 5.86905 5.84578 5.82588 5.80670 5.77963 5.75495 5.72982 5.70191 5.67762 5.65132 5.62394 5.59479 5.56625 5.54822 5.52432 5.49674 5.46526 5.43646 5.40925 5.38177 5.35341 5.32341 5.29221 5.25998 5.22900 5.20224 5.16895 5.13639 5.10466 176.121 173.709 171.476 169.492 167.447 165.299 163.288 161.184 159.055 157.036 154.979 152.921 150.895 148.835 146.803 144.751 142.751 140.772 138.776 136.782 134.777 132.79 130.817 128.866 126.933 124.986 123.074 121.175 119.257 117.274 115.354 113.429 111.53 109.673 107.795 105.878 104.011 102.117 100.28 98.422 96.556 94.728 92.885 91.074 |S12| 0.10045 0.10051 0.10055 0.10060 0.10065 0.10069 0.10073 0.10078 0.10085 0.10090 0.10098 0.10111 0.10103 0.10115 0.10113 0.10130 0.10126 0.10142 0.10134 0.10156 0.10146 0.10159 0.10169 0.10184 0.10183 0.10196 0.10201 0.10211 0.10220 0.10258 0.10272 0.10283 0.10301 0.10315 0.10333 0.10340 0.10356 0.10384 0.10401 0.10405 0.10413 0.10441 0.10441 0.10468 - 1.147 - 1.684 - 2.764 - 3.23 - 3.883 - 4.61 - 5.218 - 5.914 - 6.577 - 7.176 - 7.816 - 8.444 - 9.124 - 9.76 - 10.388 - 11.106 - 11.715 - 12.347 - 13.049 - 13.635 - 14.317 - 14.945 - 15.594 - 16.271 - 16.958 - 17.615 - 18.236 - 18.888 - 19.552 - 20.344 - 20.962 - 21.702 - 22.327 - 23.09 - 23.804 - 24.547 - 25.192 - 25.884 - 26.62 - 27.296 - 28.065 - 28.819 - 29.517 - 30.238 |S22| 0.01890 0.01961 0.02022 0.02108 0.02178 0.02240 0.02324 0.02417 0.02490 0.02589 0.02683 0.02784 0.02895 0.03030 0.03176 0.03328 0.03472 0.03683 0.03847 0.04077 0.04304 0.04551 0.04827 0.05112 0.05460 0.05759 0.06146 0.06306 0.06362 0.06362 0.06377 0.06570 0.06858 0.07094 0.07392 0.07711 0.08039 0.08395 0.08764 0.09155 0.09523 0.09969 0.10388 0.10812 - 117.716 - 119.073 - 121.834 - 123.647 - 125.155 - 127.572 - 129.668 - 131.224 - 133.739 - 135.854 - 137.345 - 139.784 - 141.384 - 143.84 - 145.852 - 147.52 - 148.773 - 150.721 - 153.215 - 155.358 - 159.06 - 162.691 - 166.671 - 170.497 - 174.453 - 178.275 178.051 174.258 170.85 163.521 160.673 158.125 155.716 153.133 151.055 148.881 147.016 145.259 143.574 141.882 140.434 138.992 137.594 136.199
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650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250
(continued)
MMG3010NT1 8 RF Device Data Freescale Semiconductor
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S11
S21
S12
S22
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 54 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 |S11| 0.21443 0.21661 0.21882 0.22193 0.22303 0.22524 0.22731 0.22921 0.23072 0.23259 0.23443 0.23625 0.23786 0.23979 0.24125 0.24422 0.24610 0.24792 0.25072 0.25383 0.25590 0.25874 0.26159 0.26531 0.26829 0.27180 0.27525 99.385 98.005 96.635 95.395 93.907 92.5 91.106 89.599 88.26 86.873 85.515 84.122 82.84 81.448 80.072 78.711 77.547 76.337 75.174 73.947 72.848 71.738 70.666 69.68 68.707 67.687 66.773 |S21| 5.07001 5.03818 5.00516 4.97224 4.93831 4.90747 4.87540 4.84438 4.81170 4.77720 4.74514 4.71210 4.68334 4.64992 4.61988 4.58846 4.55812 4.52495 4.49699 4.46681 4.43561 4.40430 4.37458 4.34458 4.31385 4.28470 4.25389 89.25 87.453 85.611 83.821 82.052 80.256 78.504 76.72 74.931 73.147 71.382 69.615 67.904 66.078 64.334 62.607 60.863 59.115 57.356 55.612 53.877 52.133 50.384 48.649 46.916 45.167 43.44 |S12| 0.10472 0.10489 0.10502 0.10521 0.10527 0.10541 0.10567 0.10587 0.10582 0.10600 0.10623 0.10637 0.10648 0.10664 0.10700 0.10702 0.10736 0.10733 0.10748 0.10765 0.10784 0.10813 0.10814 0.10821 0.10846 0.10856 0.10871 - 30.97 - 31.768 - 32.469 - 33.265 - 34.008 - 34.706 - 35.467 - 36.255 - 37.021 - 37.804 - 38.579 - 39.349 - 40.152 - 41.004 - 41.819 - 42.586 - 43.392 - 44.248 - 45.078 - 45.892 - 46.753 - 47.687 - 48.565 - 49.382 - 50.314 - 51.229 - 52.108 |S22| 0.11217 0.11632 0.12050 0.12557 0.12957 0.13384 0.13842 0.14269 0.14690 0.15188 0.15645 0.16075 0.16529 0.16969 0.17439 0.17909 0.18404 0.18914 0.19427 0.19983 0.20478 0.21036 0.21586 0.22115 0.22678 0.23264 0.23850 134.891 133.499 132.176 130.946 129.503 128.151 126.605 125.06 123.585 122.036 120.364 118.48 116.779 114.827 112.861 111.23 109.114 107.101 105.076 102.924 100.877 98.897 96.818 94.763 92.769 90.836 88.858
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2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600
MMG3010NT1 RF Device Data Freescale Semiconductor 9
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S11
S21
S12
S22
1.7 7.62 0.305 diameter
3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58
2.49
2.54
Recommended Solder Stencil
LIFETIME BUY
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3010NT1 10 RF Device Data Freescale Semiconductor
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PACKAGE DIMENSIONS
MMG3010NT1 RF Device Data Freescale Semiconductor 11
MMG3010NT1 12 RF Device Data Freescale Semiconductor
MMG3010NT1 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 3 4 5 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 8, 9
MMG3010NT1 14 RF Device Data Freescale Semiconductor
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MMG3010NT1
Document Number: RF Device Data MMG3010NT1 Rev. 5, 3/2008 Freescale Semiconductor
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